类别是'category.MOSFETs 晶体管阵列' (10000)
- 所有品牌
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 质量 | 晶体管元件材料 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 电阻 | 端子表面处理 | 附加功能 | 电压 - 额定直流 | 最大功率耗散 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 端子间距 | 额定电流 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | 参考标准 | JESD-30代码 | 输出的数量 | 效率 | 输出类型 | 最大输出电流 | 输入电压-Nom | 电压 | 模拟 IC - 其他类型 | 元素配置 | 电流 | 操作模式 | 功率耗散 | 箱体转运 | 接通延迟时间 | 功率 - 最大 | 最大输出电压 | 场效应管类型 | 晶体管应用 | Rds On(Max)@Id,Vgs | 最大输入电压 | 不同 Id 时 Vgs(th)(最大值) | 无卤素 | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 供应电流-最大值(Isup) | 漏源电压 (Vdss) | 极性/通道类型 | 下降时间(典型值) | 切换器配置 | 连续放电电流(ID) | 阈值电压 | JEDEC-95代码 | 栅极至源极电压(Vgs) | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | 双电源电压 | DS 击穿电压-最小值 | 雪崩能量等级(Eas) | 场效应管技术 | 最大结点温度(Tj) | 场效应管特性 | 漏源电阻 | 栅源电压 | 反馈上限-最大值 (Crss) | 高度 | 长度 | 宽度 | 器件厚度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | DMG4800LSD-13 | Diodes Incorporated | 数据表 | 2315 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 73.992255mg | SILICON | 2 | 26.33 ns | -55°C~150°C TJ | Cut Tape (CT) | 2011 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) - annealed | HIGH RELIABILITY | 1.17W | 鸥翼 | 260 | 40 | DMG4800LSD | 8 | Dual | 增强型MOSFET | 1.17W | 5.03 ns | 2 N-Channel (Dual) | SWITCHING | 16m Ω @ 9A, 10V | 1.6V @ 250μA | 798pF @ 10V | 8.56nC @ 5V | 4.5ns | 30V | 8.55 ns | 7.5A | 1.6V | 25V | 0.016Ohm | 30V | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 1.7mm | 4.95mm | 3.95mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||
![]() | DMC2020USD-13 | Diodes Incorporated | 数据表 | N/A |
- | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 73.992255mg | SILICON | 7.8A 6.3A | 2 | 94.1 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 1.8W | DUAL | 鸥翼 | 260 | 40 | 8 | 增强型MOSFET | N and P-Channel | SWITCHING | 20m Ω @ 7A, 4.5V | 1.5V @ 250μA | 1149pF @ 10V | 11.6nC @ 4.5V | N-CHANNEL AND P-CHANNEL | 6.3A | 10V | 6.5A | 20V | 33.6A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||
EFC6601R-TR | ON Semiconductor | 数据表 | 19834 In Stock | - | 最小起订量: 1 最小包装量: 1 | 13 Weeks | 表面贴装 | 6-XFBGA, FCBGA | 6 | 68.407399mg | 53 μs | 150°C TJ | Tape & Reel (TR) | 2007 | yes | 活跃 | 1 (Unlimited) | EAR99 | 2W | 6 | Dual | 280 ns | 2 N-Channel (Dual) | 无卤素 | 48nC @ 4.5V | 630ns | 24V | 47 μs | 13A | 12V | Logic Level Gate, 2.5V Drive | 11.5mOhm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTLUD3A260PZTAG | ON Semiconductor | 数据表 | 3000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 8 Weeks | ACTIVE (Last Updated: 23 hours ago) | Tin | 表面贴装 | 6-UFDFN Exposed Pad | YES | 6 | SILICON | 1.3A | 2 | 149 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2010 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 500mW | 6 | Dual | 增强型MOSFET | 800mW | DRAIN | 17.4 ns | 2 P-Channel (Dual) | SWITCHING | 200m Ω @ 2A, 4.5V | 1V @ 250μA | 300pF @ 10V | 4.2nC @ 4.5V | 32.3ns | 20V | 74 ns | 1.7A | 8V | 1.3A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 500μm | 1.6mm | 1.6mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMG1029SV-7 | Diodes Incorporated | 数据表 | 90000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 表面贴装 | SOT-563, SOT-666 | 6 | 3.005049mg | SILICON | 500mA 360mA | 2 | 10.6 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 4Ohm | Matte Tin (Sn) | HIGH RELIABILITY, LOW THRESHOLD | 450mW | DUAL | FLAT | 260 | 40 | DMG1029 | 6 | 增强型MOSFET | 450mW | 5.5 ns | N and P-Channel | SWITCHING | 1.7 Ω @ 500mA, 10V | 2.5V @ 250μA | 30pF @ 25V | 0.3nC @ 4.5V | 7.9ns | N-CHANNEL AND P-CHANNEL | 11.6 ns | 500mA | 2.5V | 20V | 0.37A | 60V | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 5 pF | 600μm | 1.7mm | 1.25mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||
FDMS9600S | ON Semiconductor | 数据表 | 2867 In Stock | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | ACTIVE (Last Updated: 4 days ago) | Gold | 表面贴装 | 表面贴装 | 8-PowerWDFN | 8 | 9mg | SILICON | 12A 16A | 2 | 54 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2017 | PowerTrench® | e4 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 13MOhm | 1W | Dual | 增强型MOSFET | 2.5W | DRAIN | 2 N-Channel (Dual) | SWITCHING | 8.5m Ω @ 12A, 10V | 3V @ 250μA | 1705pF @ 15V | 13nC @ 4.5V | 11ns | 32 ns | 16A | 20V | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 375 pF | 825μm | 5mm | 6mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CSD88537ND | Texas Instruments | 数据表 | 30288 In Stock | - | 最小起订量: 1 最小包装量: 1 | 6 Weeks | ACTIVE (Last Updated: 4 days ago) | Gold | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 540.001716mg | SILICON | 2 | 9 ns | -55°C~150°C TJ | Tape & Reel (TR) | NexFET™ | e4 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 雪崩 额定 | 2.1W | 鸥翼 | 260 | CSD88537 | Dual | 增强型MOSFET | 2.1W | 6 ns | 2 N-Channel (Dual) | SWITCHING | 15m Ω @ 8A, 10V | 3.6V @ 250μA | 1400pF @ 30V | 18nC @ 10V | 15ns | 60V | 19 ns | 15A | 3V | 20V | 8A | 0.019Ohm | 60V | METAL-OXIDE SEMICONDUCTOR | Standard | 1.75mm | 4.9mm | 3.91mm | 1.58mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||
![]() | IRF7910TRPBF | Infineon Technologies | 数据表 | 125 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 12 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | 16 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2002 | HEXFET® | e3 | yes | 不用于新设计 | 1 (Unlimited) | 8 | 15MOhm | 2W | 鸥翼 | 260 | 30 | IRF7910PBF | Single | 增强型MOSFET | 2W | 9.4 ns | 2 N-Channel (Dual) | SWITCHING | 15m Ω @ 8A, 4.5V | 2V @ 250μA | 1730pF @ 6V | 26nC @ 4.5V | 22ns | 6.3 ns | 10A | MS-012AA | 12V | 12V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.4986mm | 4.9784mm | 3.9878mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||
FDMA2002NZ | ON Semiconductor | 数据表 | 1390 In Stock | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | ACTIVE (Last Updated: 4 days ago) | 表面贴装 | 表面贴装 | 6-VDFN Exposed Pad | 6 | 40mg | SILICON | 2 | 12 ns | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | e4 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 123MOhm | Nickel/Palladium/Gold (Ni/Pd/Au) | 30V | 650mW | 2.9A | Dual | 增强型MOSFET | 1.5W | DRAIN | 6 ns | 2 N-Channel (Dual) | SWITCHING | 123m Ω @ 2.9A, 4.5V | 1.5V @ 250μA | 220pF @ 15V | 3nC @ 4.5V | 8ns | 8 ns | 2.9A | 1V | 12V | 30V | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 30 pF | 850μm | 2mm | 2mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||
![]() | IRF7501TRPBF | Infineon Technologies | 数据表 | 391 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | SILICON | 2 | 15 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2007 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 135mOhm | Matte Tin (Sn) | 超低电阻 | 20V | 1.25W | 鸥翼 | 2.4A | IRF7501PBF | Dual | 增强型MOSFET | 1.25W | 5.7 ns | 2 N-Channel (Dual) | SWITCHING | 135m Ω @ 1.7A, 4.5V | 700mV @ 250μA | 260pF @ 15V | 8nC @ 4.5V | 24ns | 16 ns | 2.4A | 700mV | 12V | 20V | 19A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 700 mV | 860μm | 3mm | 3mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||
NTZD5110NT1G | ON Semiconductor | 数据表 | 20000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 4 Weeks | ACTIVE (Last Updated: 4 days ago) | Tin | 表面贴装 | SOT-563, SOT-666 | YES | 6 | SILICON | 2 | 63.7 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2007 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 1.6Ohm | 900mW | FLAT | 260 | 40 | NTZD5110N | 6 | Dual | 增强型MOSFET | 250mW | 12 ns | 2 N-Channel (Dual) | SWITCHING | 1.6 Ω @ 500mA, 10V | 2.5V @ 250μA | 24.5pF @ 20V | 0.7nC @ 4.5V | 7.3ns | 60V | 7.3 ns | 294mA | 20V | 60V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 600μm | 1.7mm | 1.3mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRFHS9351TRPBF | Infineon Technologies | 数据表 | 213 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 6-VQFN Exposed Pad | 6 | SILICON | 2 | 6.3 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 6 | EAR99 | Matte Tin (Sn) | HIGH RELIABILITY | 1.4W | IRFHS9351PBF | Dual | 增强型MOSFET | 1.4W | 8.3 ns | 2 P-Channel (Dual) | SWITCHING | 170m Ω @ 3.1A, 10V | 2.4V @ 10μA | 160pF @ 25V | 3.7nC @ 10V | 30ns | 30V | 7.9 ns | 2.3A | -1.8V | 20V | 5.1A | 0.17Ohm | -30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | -1.8 V | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||
FDS6910 | ON Semiconductor | 数据表 | 15000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | ACTIVE (Last Updated: 2 days ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | 26 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2004 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 13MOhm | Tin (Sn) | 30V | 1.6W | 鸥翼 | 7.5A | 30V | Dual | 75A | 增强型MOSFET | 1.6W | 9 ns | 900mW | 2 N-Channel (Dual) | SWITCHING | 13m Ω @ 7.5A, 10V | 3V @ 250μA | 1130pF @ 15V | 24nC @ 10V | 5ns | 5 ns | 7.5A | 1.8V | 20V | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.8 V | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||
![]() | DMHC3025LSD-13 | Diodes Incorporated | 数据表 | 89581 In Stock | - | 最小起订量: 1 最小包装量: 1 | 18 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 73.992255mg | SILICON | 6A 4.2A | 28.2 ns | 4 | -55°C~150°C TJ | Cut Tape (CT) | 2013 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | HIGH RELIABILITY | 1.5W | DUAL | 鸥翼 | 260 | 40 | DMHC3025LSD | AEC-Q101 | 增强型MOSFET | 1.5W | 7.5 ns | 2 N and 2 P-Channel (H-Bridge) | SWITCHING | 25m Ω @ 5A, 10V | 2V @ 250μA | 590pF @ 15V | 11.7nC @ 10V | 4.9ns | 30V | N-CHANNEL AND P-CHANNEL | 13.5 ns | 4.2A | 2V | 20V | 6A | 0.025Ohm | -30V | 60A | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 1.7mm | 4.95mm | 3.95mm | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||
![]() | IRFHM8363TRPBF | Infineon Technologies | 数据表 | N/A |
- | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-PowerVDFN | 8 | SILICON | 2 | 12 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | HEXFET® | e3 | 不用于新设计 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | HIGH RELIABILITY | 2.7W | IRFHM8363PBF | Dual | 增强型MOSFET | 2.7W | DRAIN | 14 ns | 2 N-Channel (Dual) | SWITCHING | 14.9m Ω @ 10A, 10V | 2.35V @ 25μA | 1165pF @ 10V | 15nC @ 10V | 94ns | 30V | 33 ns | 11A | 1.8V | 20V | 0.0149Ohm | 30V | 116A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.8 V | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||
FDC6306P | ON Semiconductor | 数据表 | 74 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | ACTIVE (Last Updated: 2 days ago) | Tin | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 6 | 36mg | SILICON | 2 | 14 ns | -55°C~150°C TJ | Tape & Reel (TR) | 1999 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 170mOhm | -20V | 960mW | 鸥翼 | -1.9A | Dual | 增强型MOSFET | 960mW | 6 ns | 700mW | 2 P-Channel (Dual) | SWITCHING | 170m Ω @ 1.9A, 4.5V | 1.5V @ 250μA | 441pF @ 10V | 4.2nC @ 4.5V | 9ns | 20V | 9 ns | 1.9A | -900mV | 8V | -20V | -20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | -900 mV | 1mm | 3mm | 1.7mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||
NVMFD5853NLT1G | ON Semiconductor | 数据表 | 22220 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 13 Weeks | ACTIVE, NOT REC (Last Updated: 2 days ago) | 表面贴装 | 8-PowerTDFN | YES | 8 | SILICON | 22 ns | 2 | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | e3 | yes | 不用于新设计 | 1 (Unlimited) | 6 | EAR99 | Tin (Sn) | 3W | FLAT | 8 | AEC-Q101 | R-PDSO-F6 | Dual | 增强型MOSFET | DRAIN | 10 ns | 2 N-Channel (Dual) | 10m Ω @ 15A, 10V | 2.4V @ 250μA | 无卤素 | 1100pF @ 25V | 23nC @ 10V | 40V | 12A | 20V | 34A | 0.015Ohm | 40V | 165A | 40 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.05mm | 6.1mm | 5.1mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||
SI4532DY | ON Semiconductor | 数据表 | 88000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | ACTIVE (Last Updated: 16 hours ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 230.4mg | SILICON | 3.9A 3.5A | 2 | 18 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2017 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 65MOhm | Tin (Sn) | 30V | 2W | DUAL | 鸥翼 | 3.9A | SI4532D | 增强型MOSFET | 2W | 18 ns | 900mW | N and P-Channel | SWITCHING | 65m Ω @ 3.9A, 10V | 3V @ 250μA | 235pF @ 10V | 15nC @ 10V | 8ns | N-CHANNEL AND P-CHANNEL | 6 ns | 3.9A | 3V | 20V | 30V | METAL-OXIDE SEMICONDUCTOR | Standard | 3 V | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||
NTMFD4902NFT1G | ON Semiconductor | 数据表 | 8924 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 17 Weeks | ACTIVE (Last Updated: 1 day ago) | Tin | 表面贴装 | 8-PowerTDFN | YES | 8 | SILICON | 10.3A 13.3A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.16W | FLAT | 8 | Dual | 增强型MOSFET | 排水源头 | 1.1W 1.16W | 2 N-Channel (Dual), Schottky | SWITCHING | 6.5m Ω @ 10A, 10V | 2.2V @ 250μA | 1150pF @ 15V | 9.7nC @ 4.5V | 30V | 13.3A | 20V | 13.5A | 0.01Ohm | 60A | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | STS5DNF60L | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | ACTIVE (Last Updated: 8 months ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | 45 ns | -55°C~150°C TJ | Tape & Reel (TR) | Automotive, AEC-Q101, STripFET™ II | e3 | 活跃 | 3 (168 Hours) | 8 | EAR99 | Tin (Sn) | 低阈值 | 2W | 鸥翼 | 260 | STS5D | 8 | 增强型MOSFET | 2W | 15 ns | 2 N-Channel (Dual) | SWITCHING | 45m Ω @ 2A, 10V | 2.5V @ 250μA | 1030pF @ 25V | 15nC @ 4.5V | 28ns | 60V | 10 ns | 5A | 15V | 5A | 0.055Ohm | 60V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AUIRF7313QTR | Infineon Technologies | 数据表 | 62 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | 21 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2011 | HEXFET® | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.4W | 鸥翼 | AEC-Q101 | 增强型MOSFET | 2.4W | 3.7 ns | 2 N-Channel (Dual) | SWITCHING | 29m Ω @ 6.9A, 10V | 3V @ 250μA | 755pF @ 25V | 33nC @ 10V | 7.3ns | 30V | 11 ns | 6.9A | 3V | 20V | 30V | 450 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDS9958-F085 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 4 Weeks | ACTIVE (Last Updated: 1 week ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 230.4mg | SILICON | 2 | 27 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2017 | Automotive, AEC-Q101, PowerTrench® | yes | 活跃 | 1 (Unlimited) | 8 | 900mW | 鸥翼 | Dual | 增强型MOSFET | 2W | 6 ns | 2 P-Channel (Dual) | SWITCHING | 105m Ω @ 2.9A, 10V | 3V @ 250μA | 1020pF @ 30V | 23nC @ 10V | 3ns | 60V | 6 ns | 2.9A | 20V | 0.105Ohm | -60V | 12A | 54 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTUD3170NZT5G | ON Semiconductor | 数据表 | 100 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 8 Weeks | ACTIVE (Last Updated: 5 days ago) | Tin | 表面贴装 | SOT-963 | YES | 6 | SILICON | 220mA | 2 | 142 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2005 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 1.5Ohm | 125mW | FLAT | NTUD3170NZ | 6 | Dual | 增强型MOSFET | 200mW | 16.5 ns | 2 N-Channel (Dual) | SWITCHING | 1.5 Ω @ 100mA, 4.5V | 1V @ 250μA | 12.5pF @ 15V | 25.5ns | 80 ns | 280mA | 1V | 8V | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 400μm | 1.05mm | 850μm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRFH4253DTRPBF | Infineon Technologies | 数据表 | 497 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 14 Weeks | 表面贴装 | 表面贴装 | 8-PowerVDFN | 8 | 2 | 64A 145A | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | HEXFET® | 不用于新设计 | 1 (Unlimited) | EAR99 | 50W | Dual | 31W 50W | 2 N-Channel (Dual) | 3.2m Ω @ 30A, 10V | 2.1V @ 35μA | 1314pF @ 13V | 15nC @ 4.5V | 25V | 145A | 1.6V | 20V | 35A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 900μm | 6mm | 5mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CSD87330Q3D | Texas Instruments | 数据表 | 1892 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | ACTIVE (Last Updated: 1 day ago) | Gold | 表面贴装 | 表面贴装 | 8-PowerLDFN | 8 | 9.1 ns | -55°C~150°C TJ | Cut Tape (CT) | NexFET™ | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 6W | 260 | 1 | 0.65mm | CSD87330 | 8 | 1 | 90 % | 可调式 | 15A | 12V | 开关控制器 | Dual | 6W | 1.2V | 2 N-Channel (Half Bridge) | 27V | 2.1V @ 250μA | 900pF @ 15V | 5.8nC @ 4.5V | 7.5ns | 20mA | 30V | 1.6 ns | PUSH-PULL | 20A | 1V | 1.15V | 30V | 逻辑电平门 | 1.5mm | 3.3mm | 3.3mm | 1.5mm | 无 | 无SVHC | ROHS3 Compliant | 含铅 |
DMG4800LSD-13
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
1.639245
DMC2020USD-13
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
2.104641
EFC6601R-TR
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
NTLUD3A260PZTAG
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
1.625586
DMG1029SV-7
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
FDMS9600S
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
CSD88537ND
Texas Instruments
分类:Transistors - FETs, MOSFETs - Arrays
IRF7910TRPBF
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
3.903951
FDMA2002NZ
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
IRF7501TRPBF
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
2.900203
NTZD5110NT1G
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
IRFHS9351TRPBF
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
FDS6910
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
DMHC3025LSD-13
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
IRFHM8363TRPBF
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
9.758654
FDC6306P
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
NVMFD5853NLT1G
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
10.276750
SI4532DY
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
NTMFD4902NFT1G
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
3.471633
STS5DNF60L
STMicroelectronics
分类:Transistors - FETs, MOSFETs - Arrays
AUIRF7313QTR
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
7.210233
FDS9958-F085
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
NTUD3170NZT5G
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
2.662036
IRFH4253DTRPBF
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
12.846842
CSD87330Q3D
Texas Instruments
分类:Transistors - FETs, MOSFETs - Arrays
